www.siliconstandard.com 1 of 6 bv dss 20v r ds(on) 35mw i d 6a s1 g1 s2 g2 d1 d1 d2 d2 so-8 g2 d2 s2 g1 d1 s1 description pb-free; rohs compliant. advanced power mosfets from silicon standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the SSM4924GM is in an so-8 package, which is widely preferred for commercial and industrial surface mount applications. this device is suitable for low voltage applications such as dc/dc converters. simple drive requirement lower gate charge fast switching characteristics bv r i absolute maximum ratings 12/10/2004 rev.2.01 dual n-channel enhancement-mode power mosfets symbol parameter units v ds drain-source voltage v v gs gate-source voltage v i d @t a =25c continuous drain current 3 a i d @t a =70c continuous drain current 3 a i dm pulsed drain current 1,4 a p d @t a =25c total power dissipation w linear derating factor w/c t stg storage temperature range t j operating junction temperature range symbol value unit rthj-amb max. 62.5 c/w -55 to 150 c 6 4.8 35 20 -55 to 150 c rating 2 0.016 thermal resistance junction-ambient parameter 8 SSM4924GM thermal data
www.siliconstandard.com 2 of 6 12/10/2004 rev.2.01 electrical characteristics @ t = 25 c (unless otherwise specified) j o symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v d bv dss / d t j breakdown voltage temperature coefficient reference to 25c, i d =1ma - 0.037 -v/c r ds(on) static drain-source on-resistance v gs =4.5v, i d =6a - - 35 mw v gs =2.5v, i d =5.2a - - 50 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.5 - 1.2 v g fs forward transconductance v ds =10v, i d =6a - 18.5 - s i dss drain-source leakage current (t j =25 o c) v ds =20v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =16v, v gs =0v - - 25 ua i gss gate-source leakage v gs =8v - - na q g total gate charge 2 i d =6a - 9 - nc q gs gate-source charge v ds =10v - 1.8 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4.2 - nc t d(on) turn-on delay time 2 v ds =10v - 6.5 - ns t r rise time i d =1a - 14 - ns t d(off) turn-off delay time r g =6w ,v gs =4.5v - 20 - ns t f fall time r d =10w -15- ns c iss input capacitance v gs =0v - 300 - pf c oss output capacitance v ds =8v - 255 - pf c rss reverse transfer capacitance f=1.0mhz - 115 - pf symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.2v - - 1.7 a i sm pulsed source current ( body diode ) 1 --35 a v sd forward on voltage 2 t j =25c, i s =1.7a, v gs =0v - 0.75 1.2 v notes: 1.pulse width limited by maximum junction temperature. 2.pulse width < 300us, duty cycle < 2%. 3.surface-mounted on fr4 board, t< 10sec. 4.pulse width < 10us, duty cycle < 1%. 100 100 SSM4924GM source-drain diode
www.siliconstandard.com 3 of 6 12/10/2004 rev.2.01 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance vs. gate voltage fig 4. normalized on-resistance vs. junction temperature 0 5 10 15 20 25 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =4.5v v g =2.5v v g =3.5v v g =3.0v v g =2.0v 0 5 10 15 20 25 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =2.5v v g =3.0v v g =3.5v v g =4.5v v g =2.0v 20 25 30 35 40 45 2345 v gs (v) r dson (m w ) i d=6a t c =25c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =6a v g =4.5v SSM4924GM
www.siliconstandard.com 4 of 6 12/10/2004 rev.2.01 fig 5. maximum drain current vs. fig 6. typical power dissipation case temperature fig 7. maximum safe operating area fig 8. effective transient thermal impedance 0 1 2 3 4 5 6 7 8 25 50 75 100 125 150 t c , case temperature ( o c) i d , drain current (a) 0 1 2 3 0 50 100 150 t c ,case temperature ( o c) p d (w) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a t t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse 0.1 1 10 100 0.1 1 10 100 v ds (v) i d (a) t c =25 o c single pulse 1s 1ms 10ms 100ms SSM4924GM
www.siliconstandard.com 5 of 6 12/10/2004 rev.2.01 fig 9. gate charge characteristics fig 10. typical capacitance characteristics fig 11. forward characteristic of fig 12. gate threshold voltage vs. reverse diode junction temperature 10 100 1000 1 5 9 1317212529 v ds (v) c (pf) f =1.0mhz ciss coss crss 0 1 2 3 4 5 6 024681 01 2 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =6a v ds =10v 0.01 0.10 1.00 10.00 100.00 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd (v) i s (a) t j =25 o c t j =150 o c 0 0.5 1 1.5 -50 0 50 100 150 t j ,junction temperature ( o c) v gs(th) (v) SSM4924GM
in formation furnished by silicon standard corporation is believed to be accurate and reliable. however, silicon standard corporation makes no guarantee or warranty, expre ss or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. silicon standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. no license is granted, whether expressly or by im plication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of silicon standard corporation or any third parties. www.siliconstandard.com 6 of 6 12/10/2004 rev.2.01 fig 13. switching time circuit fig 14. switching time waveform fig 15. gate charge circuit fig 16. gate charge waveform t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 0.5x rated v ds to the oscilloscope - + 4..5v d g s v ds v gs r g r d 0.5 x rated v ds to the oscilloscope - + d g s v ds v gs i d i g 1~ 3 ma SSM4924GM
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